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| The ionizing radiation effects of γ-ray in Si-Sonic microphone |
| QU Yantao1, QUAN Hongtao1,2, HAN Yongchao1 |
1. Department of Radiation Safety, China Institute of Atomic Energy, Beijing 102413 China;
2. University of Electronic Science and Technology of China |
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Abstract Objective By analyzing the waveform of the output signal of Si-Sonic Microphone and the variation of JFET DC parameters under γ-ray irradiation conditions, the radiation damage effect of the sensor is obtained and methods to improve the radiation resistance are proposed. Methods From the perspective of the ionizing radiation damage effect caused by γ-rays, the Si-Sonic Microphone and the JFET irradiation experiments under 60Co γ-ray were designed. Results Output signal of Microphone increases rapidly with a linear distortion generated at the positive parts of the amplitude after several minute of irradiation; output signal reduces significantly after one hour irradiation; the single amplitude continuously decreases with the cell voltage reduction. The source drain current and transconductance of N channel JFET decline slightly and no significant change of P channel JFET DC parameters is shown after 432 kGy irradiation. Conclusion JFET has good irradiation resistance, and P channel JFET is better than N channel JFET. The irradiance effect of γ-ray on Si-Sonic Microphone is mainly reflected in the radiation damage of ionizing radiation to its integrated N channel MOS devices. Three methods for enhancing the γ-ray irradiation resistance of the Si-Sonic Microphone are proposed by the experimental data.
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Received: 13 May 2019
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