[1] 袁龙,付熙明,雷翠萍,等.全国核辐射突发事件卫生应急能力现状分析[J].中国辐射卫生,2019,28(1):28-32. [2] 安艳,陈如松.国内外核与放射突发事故和医学应急体系及对我们的启示[J].中国辐射卫生,2007,16(3):373-376. [3] 庞洪超,王莹,袁国军,等.反符合方法用于降低内照射直接测量系统探测下限的研究[J].中国辐射卫生, 2018,27(6):63-65. [4] Xu S L, Zou S L, Huang Y J. γ-ray Detection Using Commercial Off-The-Shelf CMOS and CCD Image Sensors[J]. IEEE Sensors Journal,2017,17(20):6599-6604. [5] Benko U, Petrovcic J, Jurici D, et al. An approach to fault diagnosis of vacuum cleaner motors based on sound analysis[J]. Mechanical Systems and Signal Processing, 2005,19(2):427-445. [6] Xu S L, Zou S L, Huang Y J. Effect of γ-ray Ionizing Radiation on CMOS Active Pixel Sensor[J].Chinese Journal of Luminescence,2017,38(3):308-315. [7] 郭子成,刘国福,吴石林,等.半导体探测器输出电流检测系统前置放大器设计[J].核电子学与探测技术, 2017,37(7):667-672. [8] Goiffon V, Estribeau M. Radiation damages in CMOS image sensors:testing and hardening challenges brought by deep sub-micrometer CIS processes[J]. Proceedings of SPIE-The International Society for Optical Engineering, 2010, 7826(2). [9] Barnaby, H. J. Total-Ionizing-Dose Effects in Modern CMOS Technologies[J]. IEEE Transactions on Nuclear Science, 2006, 53(6):3103-3121. [10] Xu S L, Zou S L, Wu Z, et al. Comparative Study on Ionizing Radiation Damage of Different Types of Image Sensor Modules[J]. Atomic Energy Science & Technology, 2016, 50(11):2092-2100. [11] Gao R S, Zhen L, Li G A, et al. Effect of γ-ray irradiation on the magnetic properties of NdFeB and Fe-Cr-Co permanent magnets[J]. Journal of Magnetism & Magnetic Materials, 2006, 302(1):156-159. [12] Xu S L, Zou S L. Total-ionizing-dose effects in pixel performance degradation of CMOS image sensors under low dose rate[C]/23rd International Conference on Nuclear Engineering:Nuclear Power-Reliable Global Energy, U.C.A.:American Society of Mechanical Engineers, 2015. [13] Pushpa N, Praveen K C, Prakash A P G, et al. A comparison of 48 MeV Li3+ ion, 100 MeV F8+ ion and Co-60 gamma irradiation effect on N-channel MOSFETs[J]. Nuclear Inst & Methods in Physics Research A, 2010, 613(2):280-289. [14] Xu S L, Zou S L, Wu Z, et al. Research on Availability of CIS Digital Module as Monitoring and Radiation Alarm Equipment under Condition of Nuclear Accidents[J]. Nuclear Power Engineering, 2017, 38(1):88-94. [15] Dominguez-Pumar M, Bheesayagari C R, Gorreta S, et al. Closed-Loop Compensation of Charge Trapping Induced by Ionizing Radiation in MOS Capacitors[J].IEEE Transactions on Industrial Electronics,2018, 65(3):2518-2524. [16] Assaf J. Recovering behavior of JFET transistors after gamma ray irradiation[J]. Radiation Physics and Chemistry,2011,80(3):491-495. [17] Petrosyants K O, Samburskii L M, Kharitonov I A, et al. Measurements of the Electrical Characteristics of Bipolar and MOS Transistors Under the Effect of Radiation[J]. Measurement Techniques,2017,59(10):1-8. [18] Yun L, Yao M, Wei L, et al. Study of γ-ray irradiation influence on TiN/HfO 2/Si MOS capacitor by C-V and DLTS[J]. Superlattices & Microstructures,2018,120. [19] Assaf J. High gamma dose induced damage on two types of discrete JFET transistors[J]. Physica B:Condensed Matter, 2009,404(1):73-78. [20] Koman B P, Bihun R I, Balitskii O A. Effect of combined radiation processing on parameters of Si-based MOS transistors[J]. Radiation Effects & Defects in Solids,2017,172(7-8):1-10. [21] Abubakar S, Kaya S, Karacali H, et al. The Gamma Irradiation Responses of Yttrium Oxide Capacitors and First Assessment Usage in Radiation Sensors[J]. Sensors & Actuators A Physical,2017,258:44-48. [22] 陈盘训.半导体器件和集成电路的辐照效应[M].北京:国防工业出版社,2005.
